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| Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode BP 104 S Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.6 0.2 0.9 0.7 GEO06861 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 20 ns) q geeignet fur Vapor-Phase Loten und IRReflow-Loten q SMT-fahig Anwendungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb q IR-Fernsteuerungen q Industrieelektronik q "Messen/Steuern/Regeln" Features q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q Suitable for vapor-phase and IR-reflow soldering q Suitable for SMT Applications q Photointerrupters q IR remote controls q Industrial electronics q For control and drive circuits Typ Type BP 104 S Bestellnummer Ordering Code Q62702-P1605 Semiconductor Group 1 1997-11-19 feo06862 Photosensitive area 2.20 mm x 2.20 mm Cathode lead 4.0 3.7 1.7 1.5 0...5 BP 104 S Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 85 20 150 Einheit Unit C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Symbol Symbol Wert Value 55 ( 40) 850 400 ... 1100 Einheit Unit nA/lx nm nm S S max A LxB LxW H 4.84 2.20 x 2.20 mm2 mm x mm 0.3 mm 60 2 ( 30) 0.62 0.90 Grad deg. nA A/W Electrons Photon IR S Semiconductor Group 2 1997-11-19 BP 104 S Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Description Leerlaufspannung, EV = 1000 lx Open-circuit voltage Kurzschlustrom, EV = 1000 lx Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm Nachweisgrenze, VR = 10 V, = 850 nm Detection limit Symbol Symbol Wert Value 360 ( 280) 50 20 Einheit Unit mV A ns VO ISC tr, tf VF C0 TKV TKI NEP 1.3 48 - 2.6 0.18 3.6 x 10- 14 V pF mV/K %/K W Hz cm * Hz W D* 6.1 x 1012 Semiconductor Group 3 1997-11-19 BP 104 S Relative spectral sensitivity Srel = f () 100 OHF00078 Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) P 10 3 A OHF02283 Total power dissipation Ptot = f (TA) 10 4 mV S rel % 80 V 10 3 160 mW Ptot 140 120 100 OHF00958 10 2 VO 60 10 1 40 P 10 2 80 60 10 0 20 10 1 40 20 0 400 500 600 700 800 900 nm 1100 10 -1 10 0 10 1 10 2 10 0 10 3 lx 10 4 EV 0 0 20 40 60 80 C 100 TA Dark current IR = f (VR), E = 0 10 2 nA OHF02284 Capacitance C = f (VR), f = 1 MHz, E = 0 60 OHF01778 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 C pF 50 R nA 10 2 R 10 1 40 10 1 30 10 0 20 10 0 10 10 -1 10 -1 0 2 4 6 8 10 12 14 16 V 20 0 -2 10 10 -1 10 0 VR 10 1 V 10 2 VR 0 20 40 60 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-19 |
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